-conauetoi lpioaucti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mj16010, mj16012, MJH16010, mjh16012 5-a switchesjf \r transistors high-voltage n-p-n types for off-line power supplies and other high-voltage switching applications applications: features: ? fast switching speed ? high-voltage ratings. vc(v - 850 v ? low vcilsat> at lc - ida i oil-una power supplies i high-voltage inverters i switching regulators terminal designations ? (flan9ei mjib010 mji6012 ?c?- irstt jedec to-204aa (200 mil diameter pin holallon) collector , flang* top view jedec to-218ac MJH16010 mjh16012 the mj16010. mj16012, MJH16010. and mjh16012 switchmax ii series of silicon n-p-n power transistors fea- ture high voltage capability, last switching speeds, and low saturation voltages, together with high safe-operating-area (soa) ratings they are specially designed for off-line power supplies, converter circuits, and pulse-width-modulated regulators these high-voltage, high-speed transistors are tested for parameters that are essential to the design of high-power switching circuits switching times, including inductive turn-off time, and saturation voltages are specified at 100c to provide informatton necessary for worst-case design. the mj16010 and mj16012 transistors are supplied in steer jedec to-204aa hermetic packages. the MJH16010 and mjh16012 transistors are supplied in jedec to-218ac plastic packages. maximum ratings, absolute-maximum values: vebg ? ? le(sat) ... pt @tc = 25c @t^ = iooc tc above 25 c, derate linearly mj16010 mj16012 flflfi fi m MJH16010 mjh16012 5fl in 1s . 17s mn 135 r3.r 1ftfi -a.s in 9no -ftft tn 1fin tl at distance 1/8" in (3.17 mm) from seating plane for 10 s max at distance > 1/16" in. (1 58 mm) from seating plane for 10 s max tsjc ? .235. - 1. _235. . 0.93 . v ' v v a a a a a w w w/"c c c c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj seini-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mj16010, mj16012, MJH16010. mjh1fi019 mj16010, MJH16010 electrical characteristics itc ' 25c unlass otherwise noted) symbol | min [ typ | max [ unit | characteristic off characteristics (1) collector-emitter sustaining voltage |lc? 100ma. 18 = 0) collector cutoff current ivcev -- 850 vdc. v8e(off) = 1 & vdc| | vcev = 850 vdc, v8e(0|f ) - 1 5 vdc. tc = 1 00c| collector cutoff current |vce = 850 vdc. rbe = 80 0. tc = 100ci emitter cutoff current (veb =60 vdc, ic - 01 vceo(3u3) icev icer >ebo 450 - ? ? ? - ? ^* ? 0.25 1,5 2.6 1.0 vdc mado madc madc second breakdown second breakdown collector current with base forward biased clamped inductive soa with base reverse biased 's/b rbsoa see figure 1 saa figure 2 on characteristics |11 collector-emitter saturation voltage he - 5 0 adc. ib - 7 ad) (!(;= 10 adc, lg= 1 3 adc) |ic = 10 adc. ib - 1 3 adc. tc = 100c) aasa-einitter saturation voltage llc= 10 adc. ib' ' 3 adc) hc ? 10 adc. ib = 1 3 adc. tc - 100?c) dc current gam (lc= 15 adc. vce= 50 vdc) vce(sat) vbe(sat) ife - - 5.0 0.5 1.0 1.0 ~ 2.s 3.0 3.0 1.5 1.5 ? vdc vdc ? dynamic characteristics output capacitance |vcb= lovdc. ie=0. f,?,= 10khz) cob ? ? 400 pf switching characteristics retittlve load delay time risa time storage time fall time storage time fall time hc= 10 adc. vcc =250 vdc. ibi = 1 3 adc. pw = 30 ks. duty cycle s 'f is if ? ? ? ? ? ? 40 100 1400 140 600 100 ? ? ? ? ? ? ns inductive load storage time fall time crossover time storage time fall time crossover time [lc= 10 adc. ibi = 1 3 adc. vbloff)*50vdc. vce(pk) = 400 vdc) (tc= 100-c) (tc= i5oc> mj16012, mjh16012 electrical characteristics (tc = 7s?c unless otherwise hmadl characterise symbol mln typ max unit off characteristics (1) collector-emitter susteming voltage dc* 100ma. ig -0) collector cutoff current (vcev = 850 vdc. vbe(qf() -- 1 5 vdc) (vcev = 850 vdc. vbe(off) - 1 5 vdc. tc = 100c) collector cutoff current (vce = 850 vdc, rbe * so n. tc = iooci emitter cutoff current |veb = 6 0 vdc. ic - 0) vceo(sus) icev 'cer iebo 450 - ? ? ? - ? ? - 0.25 1.5 2.6 1.0 vdc madc madc madc second breakdown second breakdown collector current with base forward biased clamped inductive soa with base reverse biased 's/b rbsoa see figure 1 see figure 2 on characteristics (1) collector-emitter saturation voltage dc = 5 0 adc. ib = 0 5 adc) dc- 10 adc. ib = 1 oadc) dc = '0 adc. iq = 1 0 adc. tc = 100c) base-emitter saturation voltage (lc= 10 adc, ib> 1 oadc) (1c = 10 adc. ib = 1 oadc. tc = 100"c) dc current gam (ic= 15 adc. vce = 50vdc) vce(sat) v8e(sal) "fe - - 7.0 - - ? 2.s 3.0 3.0 1.s 1,6 ? vdc vdc ? dynamic characteristics output capacitance (vcb = 10 vdc, ie = o. f,es, = i o ichd cob ? ? 400 pf switching characteristics resistive load delay time rise time storage time fall time storage time fall time (lc= 10 adc. vcc = 250 vdc. ib] - 1 oadc. pw - 30 us. duty cycle =s2 0%) db2 =20 adc. rb= 1 60) ?vfleloffl = 5 0 vdc] >d tr is if >s if - ? ? ? ? - 40 100 1400 140 600 100 ? ? ? ? ns inductive load storage time fall time crossover time storage time fall time crossover time dc= loadc. ib1 = 1 0 adc. vbe|qffl = 50vdc, vce(pk) = "oovdcl |tc= 100c) (tc= 150c) isv '? |
